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KTA1281Y(TO-92L) PDF预览

KTA1281Y(TO-92L)

更新时间: 2024-11-24 21:10:03
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
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1页 272K
描述
Transistor

KTA1281Y(TO-92L) 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

KTA1281Y(TO-92L) 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92L Plastic-Encapsulate Transistors  
TO-92L  
KTA1281 TRANSISTOR (PNP)  
1. EMITTER  
2. COLLECTOR  
3. BASE  
FEATURES  
z
z
z
Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A)  
High Speed Switching Time: tstg=1.0 μS(Typ.).  
Complementary to KTC3209.  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
-50  
-50  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-2  
A
PC  
1
W
TJ  
150  
-55-150  
Storage Temperature  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
V
V(BR)CBO IC= -100 uA, IE=0  
V(BR)CEO IC= -10mA, IB=0  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V(BR)EBO  
ICBO  
V
IE= -100μA, IC=0  
VCB= -50 V , IE=0  
VEB= -5V , IC=0  
-0.1  
-0.1  
240  
μA  
Emitter cut-off current  
IEBO  
μA  
hFE(1)  
hFE(2)  
VCE= -2V, IC= -0.5A  
VCE= -2V, IC= -1.5A  
70  
40  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
Out capacitance  
VCE(sat) IC=-1A, IB= -0.05A  
VBE(sat) IC=-1A, IB= -0.05A  
-0.5  
-1.2  
V
V
fT  
Cob  
ton  
ts  
VCE=-2V, IC=-0.5A  
100  
40  
MHz  
pF  
us  
VCB= -10 V , IE=0 , f=1MHZ  
Turn-on time  
0.1  
1
VCC=-30V,IB1=-IB2=-0.05A,  
IC=-1A  
Storage time  
us  
Fall time  
tf  
0.1  
us  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
Range  
70-140  
120 - 240  
A,Jun,2011  

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