5秒后页面跳转
KTA1270-Y-BP PDF预览

KTA1270-Y-BP

更新时间: 2024-11-18 14:51:55
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 318K
描述
Small Signal Bipolar Transistor,

KTA1270-Y-BP 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
Base Number Matches:1

KTA1270-Y-BP 数据手册

 浏览型号KTA1270-Y-BP的Datasheet PDF文件第2页 
M C C  
KTA1270-O  
KTA1270-Y  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
PNP  
Plastic-Encapsulate  
Transistors  
·
·
·
Marking:Type number  
Maximum Ratings  
TO-92  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Rating  
-35  
Unit  
V
A
E
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-30  
V
-5  
V
B
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
-0.5  
A
PC  
500  
mW  
TJ  
150  
Tstg  
Storage Temperature  
-55-150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
C
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage*  
(IC=-1.0mAdc, IB=0)  
-30  
Vdc  
Collector-Base Breakdown Voltage  
(IC=-100µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-100µAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=-35Vdc,IE=0)  
-35  
-5.0  
---  
Vdc  
Vdc  
D
-0.1  
-0.1  
uAdc  
uAdc  
IEBO  
Emitter-Base Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
---  
E
E
C
C
B
ON CHARACTERISTICS  
B
hFE  
DC Current gain(1)  
(IC=-100mAdc, VCE=-1.0Vdc)  
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
G
70  
25  
---  
---  
240  
---  
---  
(IC=-400mAdc, VCE=-6.0Vdc)  
---  
DIMENSIONS  
VCE(sat)  
VBE(on)  
fT  
Collector-Emitter Saturation Voltage  
(IC=-100mAdc, IB=-10mAdc)  
---  
---  
---  
---  
---  
---  
-0.25  
Vdc  
Vdc  
MHz  
pF  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
Base-Emitter Voltage  
(IC=-100mAdc, VCE=-1Vdc)  
Transistor Frequency  
(VCE=-6Vdc, IC=-20mAdc, F=100MHz)  
Collector output capacitance  
(VCE=-6Vdc, IE=0, F=1MHz)  
-1.0  
---  
200  
13  
E
Cob  
---  
Straight Lead  
Bent Lead  
G
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
(1) hFE Classification O: 70~140, Y: 120~240  
www.mccsemi.com  
1 of 2  
Revision: C  
2013/01/01  

与KTA1270-Y-BP相关器件

型号 品牌 获取价格 描述 数据表
KTA1270-Y-BP-HF MCC

获取价格

Small Signal Bipolar Transistor,
KTA1271 TGS

获取价格

TO-92 Plastic-Encapsulate Transistors (PNP)
KTA1271 KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)
KTA1271 CJ

获取价格

TO-92
KTA1271 FOSHAN

获取价格

TO-92
KTA1271_05 KEC

获取价格

TO-92 PACKAGE
KTA1271A KEC

获取价格

SEMICONDUCTOR TECHNICAL DATA
KTA1271O CJ

获取价格

Transistor
KTA1271Y CJ

获取价格

Transistor
KTA1272 KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)