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KTA1273

更新时间: 2024-11-19 18:09:23
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描述
PNP Transistor

KTA1273 数据手册

  
SMD Type  
Transistors  
PNP Silicon Epitaxial Transistor  
KTA1273  
Unit:mm  
SOT-89  
1.50 ±0.1  
4.50±0.1  
1.80±0.1  
Features  
Collector Power Dissipation: PC=500mW  
Collector current: IC=-2A  
Complementary to KTC3205  
3
1
2
0.44±0.1  
0.48±0.1  
0.53±0.1  
3.00±0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-30  
-30  
V
-5  
-2  
V
A
Collector Power Dissipation  
Junction temperature  
PC  
500  
mW  
Tj  
150  
Storage temperature range  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditions  
Min  
-30  
-30  
-5  
Typ Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V(BR)CBO IC=-1mA, IE=0  
V(BR)CEO IC= -10mA, IB=0  
V(BR)EBO IE= -1mA, IC=0  
V
V
ICBO  
IEBO  
hFE  
VCB = -30 V, IE = 0 A  
VEB = -5V, IC = 0 A  
-0.1  
μA  
μA  
Emitter cutoff current  
-0.1  
DC current gain *  
VCE = -2V, IC = -500mA  
100  
320  
Collector saturation voltage  
Base to emitter voltage  
VCE(sat) IC = -1.5A, IB = -30 mA  
-2  
V
V
VBE  
fT  
VCE = -2 V, IC = -500mA  
VCE = -2V, IE = 500 mA  
-1  
120  
Transition frequency  
MHz  
pF  
Output capacitance  
Cob  
VCE = -10 V, IE = 0, f = 1.0 MHz  
48  
* Pulsed: PW 350 μs, Duty Cycle 2%  
hFE Classification  
Rank  
O
Y
Range  
100200  
160320  
1
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