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KTA1271Y

更新时间: 2024-11-18 19:57:43
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 112K
描述
Transistor

KTA1271Y 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

KTA1271Y 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO – 92  
KTA1271 TRANSISTOR (PNP)  
1.EMITTER  
2.COLLECTOR  
3.BASE  
FEATURES  
z
z
High DC Current Gain  
Complementary to KTC3203  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbo  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-35  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-30  
V
-5  
V
Collector Current  
-0.8  
A
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
0.625  
200  
W
RθJA  
Tj  
/W  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR) CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
-35  
-30  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -0.1mA ,IE=0  
IC=-10mA,IB=0  
V
IE=-0.1mA,IC=0  
V
VCB=-35V,IE=0  
-0.1  
-0.2  
-0.1  
320  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=-25V,IB=0  
Emitter cut-off current  
IEBO  
VEB=-5V,IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
VCE=-1V, IC=-100mA  
VCE=-1V, IC=-700mA  
IC=-500mA,IB=-20mA  
VCE=-1V, IC=-10mA  
VCE=-5V,IC=-10mA  
VCB=-10V, IE=0, f=1MHz  
100  
35  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter voltage  
-0.7  
-0.8  
V
V
Transition frequency  
fT  
120  
19  
MHz  
pF  
Collector Output Capacitance  
Cob  
CLASSIFICATION OF hFE(1)  
RANK  
O
Y
RANGE  
100-200  
160-320  
A,Dec,2010  

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