Datasheet > KTA1273

KTA1273

更新时间： 2024-11-18 12:04:35

品牌	Logo	应用领域
TYSEMI		PC
页数	文件大小	规格书
1页	166K
描述
Collector Power Dissipation: PC=500mW

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中文翻译

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数据手册

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KTA1273 数据手册

TTT

ype

yyppeee

aann

nnDss

ssii

iiissotdIoCrs

Cerrrr

SSS

MMM

DDD

Product specification

KTA1273

Unit:mm

SOT-89

1.50 ±0.1

4.50±0.1

1.80±0.1

■Features

● Collector Power Dissipation: PC=500mW

● Collector current: IC=-2A

● Complementary to KTC3205

0.44±0.1

0.48±0.1

0.53±0.1

3.00±0.1

1.Base

2.Collector

3.Emitter

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Symbol

VCBO

VCEO

VEBO

Rating

Unit

-30

-5

-2

Collector Power Dissipation

Junction temperature

500

℃

150

Storage temperature range

Tstg

-55 to +150

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

-30

-5

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

V(BR)CBO IC=-1mA, IE=0

V(BR)CEO IC= -10mA, IB=0

V(BR)EBO IE= -1mA, IC=0

ICBO

IEBO

hFE

VCB = -30 V, IE = 0 A

VEB = -5V, IC = 0 A

-0.1

μA

Emitter cutoff current

-0.1

DC current gain *

VCE = -2V, IC = -500mA

100

320

Collector saturation voltage

Base to emitter voltage

VCE(sat) IC = -1.5A, IB = -30 mA

-2

VBE

VCE = -2 V, IC = -500mA

VCE = -2V, IE = 500 mA

-1

120

Transition frequency

MHz

Output capacitance

Cob

VCE = -10 V, IE = 0, f = 1.0 MHz

* Pulsed: PW ≤350 μs, Duty Cycle ≤2%

■ hFE Classification

Rank

Range

100～200

160～320

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

中文翻译

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