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KTA1273O

更新时间: 2024-11-19 08:54:19
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 288K
描述
Transistor

KTA1273O 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
最大集电极电流 (IC):2 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

KTA1273O 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92L Plastic-Encapsulate Transistors  
KTA1273 TRANSISTOR (PNP)  
TO-92L  
1. EMITTER  
2. COLLECTOR  
3. BASE  
FEATURES  
Complementary to KTC3205.  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
-30  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-30  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
-2  
A
PC  
1
W
TJ  
150  
-55-150  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
-30  
-30  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=-1mA, IE=0  
IC= -10mA, IB=0  
IE= -1mA, IC=0  
V
V
VCB=-30V, IE=0  
-0.1  
-0.1  
320  
-2.0  
-1.0  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB=-5V, IC=0  
DC current gain  
hFE  
VCE= -2V, IC=-500mA  
IC=-1.5A, IB=-30mA  
VCE= -2V, IC= -500mA  
100  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE  
V
V
Transition frequency  
V
CE= -2V, IC= -500mA  
120  
48  
MHz  
pF  
fT  
Collector output capacitance  
VCB=-10V, IE=0, f=1MHZ  
Cob  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
Range  
100-200  
160-320  
A,Jun,2011  

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