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KST3906MTF PDF预览

KST3906MTF

更新时间: 2024-11-14 11:14:07
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
6页 225K
描述
PNP外延硅晶体管

KST3906MTF 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:5.86
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):300 ns
最大开启时间(吨):70 nsBase Number Matches:1

KST3906MTF 数据手册

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KST3906MTF 替代型号

型号 品牌 替代类型 描述 数据表
MMBT3906 ONSEMI

完全替代

PNP 通用放大器
MMBT3906LT3G ONSEMI

类似代替

General Purpose Transistor(PNP Silicon)
MMBT3906LT1G ONSEMI

类似代替

General Purpose Transistor(PNP Silicon)

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