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KST4124L99Z PDF预览

KST4124L99Z

更新时间: 2024-11-12 14:43:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管晶体管
页数 文件大小 规格书
3页 43K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon

KST4124L99Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

KST4124L99Z 数据手册

 浏览型号KST4124L99Z的Datasheet PDF文件第2页浏览型号KST4124L99Z的Datasheet PDF文件第3页 
KST4124  
General Purpose Transistor  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
25  
V
CEO  
EBO  
5
V
I
200  
350  
150  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
C
T
Storage Temperature  
STG  
Refer to KST3904 for graphs  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
* Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
BV  
I =10µA, I =0  
30  
25  
5
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =1.0mA, I =0  
C B  
I =10µA, I =0  
V
E
C
I
I
V
=20V, I =0  
50  
50  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
V
=3V, I =0  
C
h
* DC Current Gain  
V
V
=1V, I =2mA  
120  
60  
360  
FE  
CE  
CE  
C
=1V, I =50mA  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I =50mA, I =5.0mA  
0.3  
V
V
CE  
C
B
I =50mA, I =5.0mA  
0.95  
BE  
C
B
f
I =10mA, V =20V  
300  
MHz  
T
C
CE  
f=100MHz  
C
Output Capacitance  
Noise Figure  
V
=5V, I =0, f=1.0MHz  
4
5
pF  
dB  
ob  
CB  
E
NF  
I =100µA, V =5V  
C CE  
R =1KΩ  
S
f=10Hz to 15.7KHz  
* Pulse Test: PW300µs, Duty Cycle2%  
Marking  
ZC  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

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