KSH210-I

更新时间： 2024-11-06 13:09:11

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飞兆/仙童 - FAIRCHILD		/
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数据手册

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KSH210-I 数据手册

KSH210

D-PAK for Surface Mount Applications

•

High DC Current Gain

Low Collector Emitter Saturation Voltage

Lead Formed for Surface Mount Applications (No Suffix)

Straight Lead (I-PAK, “ - I “ Suffix)

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

- 40

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

CBO

CEO

EBO

- 25

- 8

- 5

Collector Peck Current (Pulse)

Base Current

- 10

- 1

Collector Dissipation (T = 25°C)

12.5

1.4

°C

Collector Dissipation (T = 25°C)

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Max.

Units

(sus)

= - 10mA, I = 0

-25

CEO

CBO

EBO

= - 40V, I = 0

-100

= - 8V, I = 0

EBO

* DC Current Gain

= - 1V, I = - 500mA

= - 1V, I = - 2A

180

= - 2V, I = - 5A

(sat)

* Collector-Emitter Saturation Voltage

= - 500mA, I = - 50mA

-0.3

-0.75

-1.8

= - 2A, I = - 200mA

= - 5A, I = - 1A

(sat)

(on)

* Base-Emitter Saturation Voltage

* Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

= - 5A, I = - 1A

-2.5

-1.6

= - 1V, I = - 2A

= - 10V, I = - 100mA

MHz

= - 10V, I = 0, f = 0.1MHz

120

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A4, October 2002

12 3 4 5 6

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