生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | TO-220, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.31 |
其他特性: | HIGH RELIABILITY | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 800 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 8 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 15 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC5027RHTU | FAIRCHILD |
获取价格 |
暂无描述 | |
KSC5027RJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5027RTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5029 | FAIRCHILD |
获取价格 |
High Voltage and High Reliabilty | |
KSC5029N | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
KSC5029O | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
KSC5029OTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
KSC5029-R | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 4.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
KSC5030 | SAMSUNG |
获取价格 |
NPN (HIGH VOLTAGE AND HIGH RELIABILITY) | |
KSC5030 | FAIRCHILD |
获取价格 |
High Voltage and High Reliabilty |