KSC5027
High Voltage and High Reliability
•
•
High Speed Switching
Wide SOA
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
1100
V
V
CBO
CEO
EBO
800
7
V
I
I
3
10
A
C
A
CP
B
I
1.5
A
P
Collector Dissipation ( T =25°C)
50
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
I
I
I
= 1mA, I = 0
1100
800
7
V
V
V
V
CBO
CEO
EBO
C
C
E
E
BV
BV
= 5mA, R =∞
BE
= 1mA, I = 0
C
V
(sus)
I = 1.5A, I = -I = 0.3A
800
CEX
C
B1
B2
L = 2mH, Clamped
I
I
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
V
= 800V, I = 0
10
10
40
µA
µA
CBO
EBO
CB
EB
E
= 5V, I = 0
C
h
h
V
V
= 5V, I = 0.2A
10
8
FE1
FE2
CE
CE
C
= 5V, I = 1A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
I
I
= 1.5A, I = 0.3A
2
V
V
CE
C
C
B
= 1.5A, I = 0.3A
1.5
BE
B
C
V
= 10V, I = 0, f = 1MHz
60
15
pF
MHz
µs
ob
CB
E
f
t
t
t
Current Gain Bandwidth Product
Turn ON Time
V
V
I
= 10V, I = 0.2A
T
CE
C
= 400V
0.5
3
ON
CC
= 5I = -2.5I = 2A
Storage Time
C
B1 B2
µs
STG
F
R = 200Ω
L
Fall Time
0.3
µs
h
Classification
FE
Classification
N
R
O
h
10 ~ 20
15 ~ 30
20 ~ 40
FE1
©2000 Fairchild Semiconductor International
Rev. A, February 2000