Datasheet > KSC2331R(TO-92L)

KSC2331R(TO-92L)

更新时间： 2024-11-02 14:51:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
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1页	311K
描述
Transistor

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技术参数
数据手册

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KSC2331R(TO-92L) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

KSC2331R(TO-92L) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

TO-92L

KSC2331 TRANSISTOR (NPN)

1.EMITTER

FEATURE

2.COLLECTOR

3.BASE

Complement to KSA931

High Collector-Base Voltage: V_CBO=80V

Collector Current: I_C=700mA

Collector Dissipation: P_C=1W

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

700

℃

P_C

T_J

150

-55-150

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

I_C= 100μA,I_E=0

I_C= 10mA,I_B=0

I_E= 10μA,I_C=0

V_CB=60V,I_E=0

0.1

240

0.7

1.2

μA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

μA

DC current gain

h_FE

V_CE=2V,I_C=50mA

I_C=500m A,I_B=50mA

I_C=500mA,I_B=50mA

V_CB=10V,I_E=0,f=1MHz

V_CE=10V,I_C=50mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

C_ob

Collector output capacitance

Transition frequency

f _T

MHz

CLASSIFICATION OF h_FE

Rank

40-80

70-140

120-240

Range

A,Jun,2011

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