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KSC2331Y PDF预览

KSC2331Y

更新时间: 2024-11-02 13:09:11
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体晶体管
页数 文件大小 规格书
1页 21K
描述
Transistor

KSC2331Y 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
最大集电极电流 (IC):0.7 A配置:Single
最小直流电流增益 (hFE):120最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):30 MHzBase Number Matches:1

KSC2331Y 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92L Plastic-Encapsulate Transistors  
TO-92L  
KSC2331 TRANSISTOR NPN  
1.EMITTER  
FEATURE  
2.COLLECTOR  
3.BASE  
Power dissipation  
PCM  
Collector current  
ICM  
:
1
W
A
Tamb=25  
:
0.7  
Collector-base voltage  
V(BR)CBO : 80  
V
Operating and storage junction temperature range  
TJ Tstg: -55 to +150  
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= 100 IE=0  
IC= 10mA , IB=0  
IE= 10 IC=0  
VCB=60V , IE=0  
VEB=5V , IC=0  
MIN  
80  
60  
8
TYP  
MAX  
UNIT  
V
V
V
A
A
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
A
A
0.1  
0.1  
240  
0.7  
1.2  
IEBO  
Emitter cut-off current  
DC current gain  
hFE  
VCE=2 V, IC= 50mA  
IC= 500m A, IB= 50mA  
IC= 500 mA, IB= 50mA  
40  
VCE(sat)  
VBE(sat)  
Cob  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
Collector output capacitance  
Transition frequency  
(VCB=10V IE=0,f=1MHz)  
VCE= 10 V, IC= 50mA  
8
pF  
30  
MHz  
f T  
CLASSIFICATION OF hFE  
(1)  
R
O
Y
Rank  
Range  
40-80  
70-140  
120-240  

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