生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.6 |
最大集电极电流 (IC): | 0.7 A | 配置: | Single |
最小直流电流增益 (hFE): | 120 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 30 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC2331-Y | SAMSUNG |
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暂无描述 | |
KSC2331Y(TO-92L) | CJ |
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Transistor | |
KSC2331YBU | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, | |
KSC2331YSHTA | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, | |
KSC2331YTA | FAIRCHILD |
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NPN Epitaxial Silicon Transistor, 3LD, TO-92L, NON-JEDEC 8MM TALL BODY LD FORM TA TYPE, 20 | |
KSC2331YTA | ONSEMI |
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NPN外延硅晶体管 | |
KSC2331YTA_NL | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, | |
KSC2333 | FAIRCHILD |
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High Speed Switching Application | |
KSC2333 | SAMSUNG |
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Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC2333J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |