Datasheet > KSC2331-TO-92L

KSC2331-TO-92L

更新时间： 2024-11-02 11:31:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
1页	21K
描述
TRANSISTOR（ NPN ）

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中文翻译

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数据手册

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KSC2331-TO-92L 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

TO-92L

KSC2331 TRANSISTOR NPN

1.EMITTER

FEATURE

2.COLLECTOR

3.BASE

Power dissipation

P_CM

Collector current

I_CM

Tamb=25

0.7

Collector-base voltage

V_(BR)CBO: 80

Operating and storage junction temperature range

T_JT_stg: -55 to +150

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic= 100 I_E=0

I_C= 10mA , I_B=0

I_E= 10 I_C=0

V_CB=60V , I_E=0

V_EB=5V , I_C=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

0.1

240

0.7

1.2

I_EBO

Emitter cut-off current

DC current gain

h_FE

V_CE=2 V, I_C= 50mA

I_C= 500m A, I_B= 50mA

I_C= 500 mA, I_B= 50mA

V_CE(sat)

V_BE(sat)

C_ob

Collector-emitter saturation voltage

Base-emitter voltage

Collector output capacitance

Transition frequency

(V_CB=10V I_E=0,f=1MHz)

V_CE= 10 V, I_C= 50mA

MHz

f _T

CLASSIFICATION OF hFE

(1)

Rank

Range

40-80

70-140

120-240

中文翻译

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