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KSC2333O PDF预览

KSC2333O

更新时间: 2024-01-07 22:12:34
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
5页 55K
描述
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC2333O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.76最大集电极电流 (IC):2 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KSC2333O 数据手册

 浏览型号KSC2333O的Datasheet PDF文件第2页浏览型号KSC2333O的Datasheet PDF文件第3页浏览型号KSC2333O的Datasheet PDF文件第4页浏览型号KSC2333O的Datasheet PDF文件第5页 
KSC2333  
High Speed Switching Application  
Low Collector Saturation Voltage  
Specified of Reverse Biased SOA With Inductive Load  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
500  
V
V
CBO  
CEO  
EBO  
400  
7
V
I
2
A
C
I
I
4
A
CP  
B
1
15  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
150  
J
Storage Temperature  
- 55 ~ 150  
STG  
*PW350µs, Duty Cycle10%  
Electrical Characteristics TC=25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min.  
400  
450  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 0.5A, I =0.1A, L = 1mH  
V
V
CEO  
C
C
B
V
(sus)1  
= 0.5A, I = -I = 0.1A  
B1 B2  
CEX  
T
= 125°C, L = 180µH, clamped  
C
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
= 1A, I = 0.2A, -I =0.2A  
400  
V
CEX  
C
B1  
B2  
T = 125°C, L = 180µH, clamped  
C
I
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
V
V
V
V
= 400V, I = 0  
10  
1
µA  
mA  
µA  
CBO  
CB  
CE  
CE  
CE  
E
I
I
I
= 400V, R =51, T = 125°C  
BE C  
CER  
= 400V, V (off) = -5V  
10  
1
CEX1  
CEX2  
BE  
= 400V, V (off) = -5V @  
mA  
BE  
T
= 125°C  
C
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
10  
80  
µA  
EBO  
EB  
C
h
h
V
V
= 5V, I = 0.1A  
20  
10  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 0.5A  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= 0.5A, I = 0.1A  
1
1.2  
1
V
V
CE  
C
C
B
= 0.5A, I = 0.1A  
BE  
B
t
t
t
V
I
= 150V, I = 0.5A  
µs  
µs  
µs  
ON  
CC  
C
= - I = 0.1A  
Storage Time  
B1  
B2  
2.5  
1
STG  
F
R = 300Ω  
L
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2%Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
20 ~ 40  
30 ~ 60  
40 ~ 80  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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