KSC2335FRTU

更新时间： 2024-01-20 07:41:08

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管功率双极晶体管局域网
页数	文件大小	规格书
4页	55K
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KSC2335FRTU 数据手册

KSC2335

High Speed, High Voltage Switching

•

Industrial Use

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

500

V _CEO

V_EBO

I_C

400

I_CP

I_B

3.5

P_C

Collector Dissipation (T =25°C)

1.5

°C

Collector Dissipation (T =25°C)

T_J

Junction Temperature

150

T_STG

Storage Temperature

- 55 ~ 150

* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

400

450

Max.

Units

(sus)

Collector-Emitter Sustaining Voltage

= 3A, I = 0.6A, L = 1mH

CEO

(sus)1

= 3A, I = -I = 0.6A

B1 B2

CEX

(off) = -5V, L = 180µH, Clamped

(sus)2

Collector-Emitter Sustaining Voltage

= 6A,I = 2A, I = -0.6A

400

CEX

(off) = -5V, L = 180µH, Clamped

Collector Cut-off Current

= 400V, I = 0

µA

CBO

CER

= 400V, R = 51Ω @ T =125°C

= 400V, V (off)= -1.5V

CEX1

CEX2

= 400V, V (off)= -1.5V @

T =125°C

Emitter Cut-off Current

* DC Current Gain

= 5V, I = 0

µA

EBO

= 5V, I = 0.1A

= 5V, I = 1A

FE2

FE3

= 5V, I = 3A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Turn ON Time

= 3A, I = 0.6A

1.2

(sat)

= 3A, I = 0.6A

=150V, I = 3A

µs

= -I = 0.6A

Storage Time

2.5

STG

R = 50Ω

Fall Time

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

Classification

20 ~ 40

30 ~ 60

40 ~ 80

FE2

Rev. A1, June 2001

12 3 4

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