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KSC2383O PDF预览

KSC2383O

更新时间: 2024-02-22 04:32:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管电视放大器
页数 文件大小 规格书
5页 54K
描述
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN

KSC2383O 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:1.17Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:160 V
配置:SINGLE最小直流电流增益 (hFE):160
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

KSC2383O 数据手册

 浏览型号KSC2383O的Datasheet PDF文件第2页浏览型号KSC2383O的Datasheet PDF文件第3页浏览型号KSC2383O的Datasheet PDF文件第4页浏览型号KSC2383O的Datasheet PDF文件第5页 
KSC2383  
Color TV Audio Output & Color TV Vertical  
Deflection Output  
TO-92L  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
160  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
160  
CEO  
EBO  
6
V
I
I
1
A
C
Base Current  
0.5  
A
B
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
900  
mW  
°C  
°C  
C
T
T
150  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
I
I
V
V
=150V, I =0  
1
1
µA  
µA  
V
CBO  
EBO  
CB  
EB  
E
=6V, I =0  
C
BV  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
I =10mA, I =0  
160  
60  
CEO  
C
B
h
V
=5V, I =200mA  
320  
1.5  
FE  
CE  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =500mA, I =50mA  
V
V
CE  
C
B
(on)  
V
=5V, I =5mA  
0.45  
20  
0.75  
BE  
CE  
CE  
CB  
C
f
V
V
=5V, I =200mA  
100  
MHz  
pF  
T
C
C
=10V, I =0, f=1MHz  
20  
ob  
E
h
Classification  
FE  
Classification  
R
O
Y
h
60 ~ 120  
100 ~ 200  
160 ~ 320  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, September 2002  

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