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KSC2335R PDF预览

KSC2335R

更新时间: 2024-02-10 12:01:50
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
4页 57K
描述
Power Bipolar Transistor

KSC2335R 技术参数

生命周期:Active包装说明:TO-220, 3 PIN
Reach Compliance Code:compliant风险等级:5.62
最大集电极电流 (IC):7 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

KSC2335R 数据手册

 浏览型号KSC2335R的Datasheet PDF文件第2页浏览型号KSC2335R的Datasheet PDF文件第3页浏览型号KSC2335R的Datasheet PDF文件第4页 
KSC2335  
High Speed, High Voltage Switching  
Industrial Use  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
500  
V
V
V CEO  
VEBO  
IC  
400  
7
V
7
15  
A
ICP  
A
IB  
3.5  
A
PC  
Collector Dissipation (T =25°C)  
1.5  
W
W
°C  
°C  
a
P
Collector Dissipation (T =25°C)  
40  
C
C
TJ  
Junction Temperature  
150  
TSTG  
Storage Temperature  
- 55 ~ 150  
* PW300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
400  
450  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 3A, I = 0.6A, L = 1mH  
V
V
CEO  
C
C
B1  
(sus)1  
= 3A, I = -I = 0.6A  
B1 B2  
CEX  
V
(off) = -5V, L = 180µH, Clamped  
BE  
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
= 6A,I = 2A, I = -0.6A  
400  
V
CEX  
C
B1  
B2  
V
V
V
(off) = -5V, L = 180µH, Clamped  
BE  
CB  
CE  
I
I
I
I
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
= 400V, I = 0  
10  
1
µA  
mA  
µA  
CBO  
CER  
E
= 400V, R = 51@ T =125°C  
BE  
C
V
= 400V, V (off)= -1.5V  
10  
1
CEX1  
CEX2  
CE  
BE  
V
= 400V, V (off)= -1.5V @  
mA  
CE  
BE  
T =125°C  
C
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
10  
µA  
EBO  
EB  
C
h
h
h
V
V
V
= 5V, I = 0.1A  
20  
20  
10  
80  
80  
1
FE  
CE  
CE  
CE  
C
= 5V, I = 1A  
FE2  
FE3  
C
= 5V, I = 3A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= 3A, I = 0.6A  
1
1.2  
1
V
V
CE  
BE  
C
C
B
(sat)  
= 3A, I = 0.6A  
B
t
t
t
V
I
=150V, I = 3A  
µs  
µs  
µs  
ON  
CC  
C
= -I = 0.6A  
Storage Time  
B1  
B2  
2.5  
1
STG  
F
R = 50Ω  
L
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
20 ~ 40  
30 ~ 60  
40 ~ 80  
FE2  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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