KSC2335
High Speed, High Voltage Switching
•
Industrial Use
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
500
V
V
V CEO
VEBO
IC
400
7
V
7
15
A
ICP
A
IB
3.5
A
PC
Collector Dissipation (T =25°C)
1.5
W
W
°C
°C
a
P
Collector Dissipation (T =25°C)
40
C
C
TJ
Junction Temperature
150
TSTG
Storage Temperature
- 55 ~ 150
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
400
450
Max.
Units
V
V
(sus)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
I
I
= 3A, I = 0.6A, L = 1mH
V
V
CEO
C
C
B1
(sus)1
= 3A, I = -I = 0.6A
B1 B2
CEX
V
(off) = -5V, L = 180µH, Clamped
BE
V
(sus)2
Collector-Emitter Sustaining Voltage
I
= 6A,I = 2A, I = -0.6A
400
V
CEX
C
B1
B2
V
V
V
(off) = -5V, L = 180µH, Clamped
BE
CB
CE
I
I
I
I
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
= 400V, I = 0
10
1
µA
mA
µA
CBO
CER
E
= 400V, R = 51Ω @ T =125°C
BE
C
V
= 400V, V (off)= -1.5V
10
1
CEX1
CEX2
CE
BE
V
= 400V, V (off)= -1.5V @
mA
CE
BE
T =125°C
C
I
Emitter Cut-off Current
* DC Current Gain
V
= 5V, I = 0
10
µA
EBO
EB
C
h
h
h
V
V
V
= 5V, I = 0.1A
20
20
10
80
80
1
FE
CE
CE
CE
C
= 5V, I = 1A
FE2
FE3
C
= 5V, I = 3A
C
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 3A, I = 0.6A
1
1.2
1
V
V
CE
BE
C
C
B
(sat)
= 3A, I = 0.6A
B
t
t
t
V
I
=150V, I = 3A
µs
µs
µs
ON
CC
C
= -I = 0.6A
Storage Time
B1
B2
2.5
1
STG
F
R = 50Ω
L
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
R
O
Y
h
20 ~ 40
30 ~ 60
40 ~ 80
FE2
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001