5秒后页面跳转
KSC2335FO PDF预览

KSC2335FO

更新时间: 2024-09-23 21:19:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
3页 32K
描述
Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

KSC2335FO 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:TO-220F, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.68外壳连接:ISOLATED
最大集电极电流 (IC):7 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KSC2335FO 数据手册

 浏览型号KSC2335FO的Datasheet PDF文件第2页浏览型号KSC2335FO的Datasheet PDF文件第3页 
KSC2335F  
High Speed, High Voltage Switching  
Industrial Use  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
500  
V
V
CBO  
CEO  
EBO  
400  
7
V
I
I
7
15  
A
C
A
CP  
B
I
3.5  
A
P
Collector Dissipation (T =25°C)  
40  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
* PW300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
400  
450  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I =3A, I =0.6A, L = 1mH  
V
V
CEO  
C
B1  
(sus)1  
I =3A,I =-I =0.6A  
C B1 B2  
CEX  
V
(off)=-5V, L = 180µH, Clamped  
BE  
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I =6A, I =2A, I =-0.6A  
400  
V
CEX  
C
B1  
B2  
V
(off)=-5V, L = 180µH, Clamped  
BE  
CE  
CE  
I
I
Collector Cut-off Current  
Collector Cut-off Current  
V
=400V, I = 0  
10  
1
µA  
CBO  
CER  
E
V
=400V, R = 51@  
mA  
BE  
T
= 125°C  
C
I
I
Collector Cut-off Current  
Collector Cut-off Current  
V
V
=400V, V (off) = -1.5V  
10  
1
µA  
CEX1  
CEX2  
CE  
BE  
=400V, V (off) = -1.5V @  
mA  
CE  
BE  
T =125°C  
a
I
Emitter Cut-off Current  
* DC Current Gain  
V
=5V, I = 0  
10  
80  
µA  
EBO  
EB  
C
h
h
h
V
V
V
=5V, I = 0.1A  
20  
20  
10  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
=5V, I = 1A  
C
=5V, I =3A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn ON Time  
I =3A, I =0.6A  
1
1.2  
1
V
V
CE  
BE  
C
B
(sat)  
I =3A, I =0.6A  
C B  
t
t
t
V
=150V, I =3A  
µs  
µs  
µs  
ON  
CC  
C
I
=-I =0.6A  
Storage Time  
B1  
B2  
2.5  
1
STG  
F
R =50Ω  
L
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
20 ~ 40  
30 ~ 60  
40 ~ 80  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与KSC2335FO相关器件

型号 品牌 获取价格 描述 数据表
KSC2335F-O FAIRCHILD

获取价格

暂无描述
KSC2335FR FAIRCHILD

获取价格

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC2335F-R SAMSUNG

获取价格

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC2335FRTU FAIRCHILD

获取价格

暂无描述
KSC2335F-Y SAMSUNG

获取价格

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC2335FYTU FAIRCHILD

获取价格

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC2335-O SAMSUNG

获取价格

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC2335OTU FAIRCHILD

获取价格

暂无描述
KSC2335OTU ROCHESTER

获取价格

7A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
KSC2335R FAIRCHILD

获取价格

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast