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KRF7343 PDF预览

KRF7343

更新时间: 2024-11-18 05:41:03
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
3页 69K
描述
HEXFET Power MOSFET

KRF7343 数据手册

 浏览型号KRF7343的Datasheet PDF文件第2页浏览型号KRF7343的Datasheet PDF文件第3页 
SMD Type  
IC  
HEXFET Power MOSFET  
KRF7343  
Features  
Generation V Technology  
Ultra Low On-Resistance  
Dual N and P Channel MOSFET  
Surface Mount  
Fully Avalanche Rated  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
ID  
N-Channel  
P-Channel  
-55  
Unit  
V
55  
4.7  
3.8  
38  
-3.4  
Continuous Drain Current,VGS@10V , Ta = 25  
Continuous Drain Current ,VGS@10V , Ta = 70  
Pulsed Drain Current *1  
A
ID  
-2.7  
IDM  
-27  
2.0  
1.3  
Power Dissipation  
@Ta= 25 *5  
@Ta= 70 *5  
PD  
W
Power Dissipation  
Gate-to-Source Voltage  
VGS  
EAS  
20  
V
mJ  
A
Single Pulse Avalanche Energy *3  
Avalanche Current  
72  
114  
-3.4  
IAR  
4.7  
0.20  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt *2  
Junction and Storage Temperature Range  
Maximum Junction-to-Ambient *5  
EAR  
mJ  
V/ns  
dv/dt  
5.0  
-5.0  
-55 to + 150  
62.5  
TJ, TSTG  
R
JA  
/W  
*1 Repetitive rating; pulse width limited by max. junction temperature.  
*2 N-Channel ISD  
P-Channel ISD  
4.7A, di/dt  
-3.4A, di/dt  
220A/ s, VDD  
-150A/ s, VDD  
V(BR)DSS, TJ  
V(BR)DSS, TJ  
150  
150  
*3 N-Channel Starting TJ = 25 , L = 6.5mH RG = 25 , IAS = 4.7A.  
P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.4A.  
*5 Surface mounted on FR-4 board, t  
*4 Pulse width 300 s; duty cycle  
10sec.  
2%.  
1
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Continuous Drain Current, VGS 10V,Ta = 25 ID 12 A