Datasheet > KM718S949H-10T

KM718S949H-10T

更新时间： 2024-11-14 21:06:51

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
18页	398K
描述
SRAM

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KM718S949H-10T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Base Number Matches：	1

KM718S949H-10T 数据手册

KM736S849

KM718S949

256Kx36 & 512Kx18 Pipelined NtRAM^TM

Document Title

256Kx36 & 512Kx18-Bit Pipelined NtRAM^TM

Revision History

History

Rev.No.

Draft Date

Remark

1. Initial document.

0.0

September. 1997

Preliminary

1. Changed speed bin from 167MHz to 150MHz

2. Changed DC Parameters;

0.1

November. 1997

Preliminary

ICC : from 400mA to 450mA , ISB : from 60mA to 20mA

ISB2 : from 50mA to 85mA

1. Changed speed bin from 150MHz to 167MHz

2. Changed Power from 3.3V to 2.5V

0.2

March. 11. 1998

Preliminary

3. Changed N.C pins to Power and ZZ Pin #14, #16, #64, #66

4. Changed some control pin names.

from CEN to CKE, from BWEx to BWx

5. Modify absolute maximum ratings

VDD ; from 4.0V to 3.6V, VIN ; from 4.6V to 3.6V

6. Changed DC parameters

ISB ; from 20mA to 80mA, ISB2 ; from 85mA to 10mA

VOL ; from 0.4V to 0.2V, VOH ; from 2.4V to 2.0V

VIL ; from 0.8V to 0.7V, VIH ; from 2.0V to 1.7V

7. ADD the sleep mode timing and characteristics

CKE controlled timing and CS controlled timing

1. Removed speed bin 167MHz

0.3

April. 11. 1998

Preliminary

2.Changed AC parameters

tHZOE ; from 4.0 to 3.5 , tHZC;from 4.0 to 3.5 at -75

tHZOE ; from 5.0 to 3.5 , tHZC;from 5.0 to 3.5 , tCL/H; 4.0 to 3.0 at -10

3.Modify Sleep Mode Waveform.

Changed Sleep Mode Electrical Characteristics .

tPDS ;from Max 2cycle to Min 2cycle

tPUS ; from Max 2cycle to Min 2cycle

1.Modify from ADV to ADV at timing.

0.4

0.5

June. 02. 1998

Aug. 19. 1998

Preliminary

2.ADD the Trade Mark( NtRAM^TM

)

1. Changed DC parameters

ISB1; from 10mA to 20mA, ISB2 ; from 10mA to 20mA

1. Changed tCD,tOE from 4.0ns to 4.2ns at -75.

0.6

0.7

Sep. 28. 1998

Nov. 10. 1998

Preliminary

1. Changed DC condition at Icc and parameters

ICC ; from 420mA to 320mA at -67 , from 370mA to 300mA at -75

from 300mA to 250mA at -10.

ISB ; from 70mA to 60mA at -67 , from 60mA to 50mA at -75

from 50mA to 40mA at -10.

1.Changed VOL Max value from 0.2V to 0.4V .

1. Add 119BGA(7x17 Ball Grid Array Package) .

1. Final spec release

0.8

0.9

1.0

2.0

Dec. 23. 1998

Mar. 03. 1999

April. 01. 1999

Oct. 30. 1999

Preliminary

Final

1. Add tCYC 167Mhz.

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

November 1999

Rev 3.0

12 3 4 5 6 7...18

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与KM718S949H-10T相关器件

型号	品牌	获取价格	描述	数据表
KM718S949H-60	SAMSUNG	获取价格	SRAM
KM718S949H-60T	SAMSUNG	获取价格	SRAM
KM718S949H-67	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 3.8ns, CMOS, PBGA119, BGA-119
KM718S949H-75T	SAMSUNG	获取价格	SRAM
KM718S949T-60	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 3.5ns, CMOS, PQFP100
KM718V087H-10	SAMSUNG	获取价格	Cache SRAM, 1MX18, 10ns, CMOS, PBGA119, BGA-119
KM718V087H-80000	SAMSUNG	获取价格	Cache SRAM, 1MX18, CMOS, PBGA119, BGA-119
KM718V087T-80000	SAMSUNG	获取价格	Cache SRAM, 1MX18, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM718V089	SAMSUNG	获取价格	512Kx36 & 1Mx18 Synchronous SRAM
KM718V089H-54	SAMSUNG	获取价格	Cache SRAM, 1MX18, 3.3ns, CMOS, PBGA119, BGA-119

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