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KM718V089T-54 PDF预览

KM718V089T-54

更新时间: 2024-11-15 10:14:19
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
20页 536K
描述
Cache SRAM, 1MX18, 3.3ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

KM718V089T-54 数据手册

 浏览型号KM718V089T-54的Datasheet PDF文件第2页浏览型号KM718V089T-54的Datasheet PDF文件第3页浏览型号KM718V089T-54的Datasheet PDF文件第4页浏览型号KM718V089T-54的Datasheet PDF文件第5页浏览型号KM718V089T-54的Datasheet PDF文件第6页浏览型号KM718V089T-54的Datasheet PDF文件第7页 
KM736V989  
KM718V089  
512Kx36 & 1Mx18 Synchronous SRAM  
Document Title  
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
Initial draft  
Dec. 29. 1998  
Preliminary  
1. Update ICC & ISB values.  
May. 27. 1999 Preliminary  
1. Change ISB value from 150mA to 110mA at -67.  
2. Change ISB value from 130mA to 90mA at -72 .  
3. Change ISB value from 120mA to 80mA at -10 .  
Sep. 04. 1999  
Preliminary  
0.3  
1.0  
1. Add tCYC 167MHz and 183MHz.  
2. Changed DC condition at Icc and parameters  
Icc ; from 420mA to 400mA at -67,  
from 400mA to 380mA at -72,  
Nov. 19. 1999  
Preliminary  
from 350mA to 320mA at -10,  
1. Final Spec Release.  
Dec. 08. 1999  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
December 1999  
Rev 1.0  

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