Datasheet > KF5N25D

KF5N25D

更新时间： 2024-11-20 01:15:43

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
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描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF5N25D 数据手册

KF5N25D

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC Converters

and switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

FEATURES

2.30+0.10

0.96 MAX

0.90 MAX

· V_DSS= 250V, I_D= 4.4A

· Drain-Source ON Resistance :

R_DS(ON)(MAX)=1.1Ω @V_GS= 10V

· Qg(typ) = 6nC

1.80+0.20

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

0.1 MAX

1. GATE

2. DRAIN

3. SOURCE

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

250

UNIT

V_GSS

±30

4.4

DPAK (1)

I_D

Drain Current

@T_C=100℃

2.8

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

2.5

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

0.4

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

2.5

℃/W

Thermal Resistance, Junction-to-

Ambient

110

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2014. 6. 13

Revision No : 0

1/6

12 3 4 5 6

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