Datasheet > KF5N40F

KF5N40F

更新时间： 2024-11-10 17:15:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	650K
描述
TO-220IS(1)

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中文翻译

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数据手册

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KF5N40F 数据手册

KF5N40F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Convertor and

switching mode power supplies.

DIM MILLIMETERS

10.16 0.2

15.87 0.2

2.54 0.2

0.8 0.1

FEATURES

3.18

0.1

3.3 0.1

· V_DSS(Min.)= 400V, I_D= 4.4A

· Drain-Source ON Resistance : R_DS(ON)=1.6 Ω (max) @V_GS=10V

· Qg(typ.) =5.5 nC

12.57 0.2

0.5 0.1

13.0 0.5

3.23 0.1

1.47 MAX

2.54 0.2

MAXIMUM RATING (Tc=25℃)

6.68 0.2

4.7

0.2

2.76 0.2

1. GATE

2. DRAIN

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

400

UNIT

3. SOURCE

* Single Gauge Lead Frame

V_GSS

±30

4.4*

2.8*

10*

TO-220IS (1)

I_D

Drain Current

@T_C=100℃

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

E_AS

2.7

4.5

E_AR

dv/dt

V/ns

T_C=25℃

37.9

0.3

W/℃

℃

Drain Power

Dissipation

P_D

Derate above25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

3.3

℃/W

Thermal Resistance, Junction-to-

Ambient

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2020. 06. 03

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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