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K9F2G08U0M PDF预览

K9F2G08U0M

更新时间: 2024-02-29 17:28:22
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
38页 598K
描述
FLASH MEMORY

K9F2G08U0M 数据手册

 浏览型号K9F2G08U0M的Datasheet PDF文件第2页浏览型号K9F2G08U0M的Datasheet PDF文件第3页浏览型号K9F2G08U0M的Datasheet PDF文件第4页浏览型号K9F2G08U0M的Datasheet PDF文件第5页浏览型号K9F2G08U0M的Datasheet PDF文件第6页浏览型号K9F2G08U0M的Datasheet PDF文件第7页 
Preliminary  
FLASH MEMORY  
K9F2G08Q0M K9F2G16Q0M  
K9F2G08U0M K9F2G16U0M  
Document Title  
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
0.1  
1. Initial issue  
Sep. 19.2001  
Advance  
Nov. 22. 2002  
Preliminary  
1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)  
2. Add the data protection Vcc guidence for 1.8V device - below about  
1.1V. (Page 35)  
Mar. 6.2003  
Apr. 2. 2003  
Preliminary  
Preliminary  
0.2  
0.3  
The min. Vcc value 1.8V devices is changed.  
K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V  
Few current value is changed.  
Before  
Unit : us  
K9F2GXXU0M  
K9F2GXXQ0M  
Typ.  
Max.  
100  
±20  
±20  
Typ.  
Max.  
100  
±20  
±20  
ISB2  
20  
-
20  
-
ILI  
ILO  
-
-
After  
K9F2GXXQ0M  
K9F2GXXU0M  
Typ.  
Max.  
50  
Typ.  
Max.  
50  
ISB2  
ILI  
10  
-
10  
-
±10  
±10  
±10  
±10  
ILO  
-
-
0.4  
1. The 3rd Byte ID after 90h ID read command is don’t cared.  
The 5th Byte ID after 90h ID read command is deleted.  
2. Note is added.  
Apr. 9. 2003  
Preliminary  
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for  
durations of 20 ns or less.)  
3. Pb-free Package is added.  
K9F2G08Q0M-PCB0,PIB0  
K9F2G08U0M-PCB0,PIB0  
K9F2G16U0M-PCB0,PIB0  
K9F2G16Q0M-PCB0,PIB0  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
1

与K9F2G08U0M相关器件

型号 品牌 获取价格 描述 数据表
K9F2G08U0M-ICB00 SAMSUNG

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Flash, 256MX8, 30ns, PBGA52, 12 X 17 MM, 1 MM PITCH, ULGA-52
K9F2G08U0M-IIB00 SAMSUNG

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Flash, 256MX8, 30ns, PBGA52, 12 X 17 MM, 1 MM PITCH, ULGA-52
K9F2G08U0M-PCB0 SAMSUNG

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Flash, 256MX8, 30ns, PDSO48
K9F2G08U0M-PCB00 SAMSUNG

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Flash, 256MX8, 20ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
K9F2G08U0M-PCB0T SAMSUNG

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Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
K9F2G08U0M-PIB0 SAMSUNG

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Flash, 256MX8, 30ns, PDSO48,
K9F2G08U0M-PIB0T SAMSUNG

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Flash, 256MX8, 30ns, PDSO48,
K9F2G08U0M-YCB0 SAMSUNG

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Flash, 256MX8, 30ns, PDSO48
K9F2G08U0M-YCB00 SAMSUNG

获取价格

Flash, 256MX8, 20ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F2G08U0M-YCB0T SAMSUNG

获取价格

Flash, 256MX8, 30ns, PDSO48