Datasheet > K9F2G16U0M-YIB00

K9F2G16U0M-YIB00

更新时间： 2024-02-23 04:55:33

品牌	Logo	应用领域
三星 - SAMSUNG		光电二极管
页数	文件大小	规格书
41页	1018K
描述
Flash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

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技术参数
数据手册

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K9F2G16U0M-YIB00 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP1	包装说明：	TSOP1, TSSOP48,.8,20
针数：	48	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.92	Base Number Matches：	1

K9F2G16U0M-YIB00 数据手册

K9K4G08U1M

K9F2G08U0M K9F2G16U0M

FLASH MEMORY

Document Title

256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

Revision History

Revision No History

Draft Date

Remark

0.0

0.1

1. Initial issue

Sep. 19.2001

Advance

Nov. 22. 2002

Preliminary

1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 35)

Mar. 6.2003

Apr. 2. 2003

Preliminary

0.2

0.3

The min. Vcc value 1.8V devices is changed.

K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

Few current value is changed.

Before

Unit : us

K9F2GXXU0M

K9F2GXXQ0M

Typ.

Max.

100

±20

Typ.

Max.

100

±20

ISB2

ILI

ILO

After

K9F2GXXQ0M

K9F2GXXU0M

Typ.

Max.

Typ.

Max.

ISB2

ILI

±10

ILO

0.4

1. The 3rd Byte ID after 90h ID read command is don’t cared.

The 5th Byte ID after 90h ID read command is deleted.

2. Note is added.

Apr. 9. 2003

Preliminary

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

3. Pb-free Package is added.

K9F2G08Q0M-PCB0,PIB0

K9F2G08U0M-PCB0,PIB0

K9F2G16U0M-PCB0,PIB0

K9F2G16Q0M-PCB0,PIB0

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

12 3 4 5 6 7...41

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