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K9F4008W0A-

更新时间: 2024-11-24 22:06:51
品牌 Logo 应用领域
三星 - SAMSUNG 闪存
页数 文件大小 规格书
24页 318K
描述
512K x 8 bit NAND Flash Memory

K9F4008W0A- 数据手册

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K9F4008W0A-TCB0, K9F4008W0A-TIB0  
FLASH MEMORY  
Document Title  
512K x 8 bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
1.1  
Initial issue.  
April 10th 1998  
Preliminary  
1. Changed Operating Voltage 2.7V ~ 5.5V ® 3.0V ~ 5.5V  
July 14th 1998  
April 10th 1999  
Data Sheet 1999  
1. Added CE don’t care mode during the data-loading and reading  
1.2  
1.3  
1. Changed device name  
- KM29W040AT -> K9F4008W0A-TCB0  
- KM29W040AIT -> K9F4008W0A-TIB0  
Sep. 15th 1999  
Jul. 23th 2001  
1.Powerup sequence is added  
: Recovery time of minimum 1ms is required before internal circuit gets  
ready for any command sequences  
~ 2.5V  
~ 2.5V  
V
CC  
High  
WP  
WE  
1m  
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.  
3. AC parameter tAR is devided into tAR1, tAR2 (before revision)  
ns  
ALE to RE Delay  
tAR  
250  
-
(after revision)  
ALE to RE Delay(ID Delay)  
tAR1  
tAR2  
20  
-
-
ns  
ns  
ALE to RE Delay(Read Cycle)  
250  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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