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K6T4016U3B-RF85T PDF预览

K6T4016U3B-RF85T

更新时间: 2024-09-17 05:45:55
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 149K
描述
Standard SRAM, 256KX16, 85ns, CMOS, PDSO44

K6T4016U3B-RF85T 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:TSOP, TSOP44,.46,32Reach Compliance Code:compliant
风险等级:5.88最长访问时间:85 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:3 V认证状态:Not Qualified
反向引出线:YES最小待机电流:2 V
子类别:SRAMs最大压摆率:0.06 mA
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
Base Number Matches:1

K6T4016U3B-RF85T 数据手册

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K6T4016V3B, K6T4016U3B Family  
CMOS SRAM  
Document Title  
256Kx16 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
June 28, 1996  
Advance  
0.1  
Revise  
September 19, 1996  
Preliminary  
- Die name change ; A to B  
1.0  
2.0  
Finalize  
December 17, 1996  
February 17, 1997  
Final  
Final  
Revise  
- Operating current update and release.  
ICC(Read/Write) = 20/40 ® 10/45mA  
ICC1(Read/Write) = 20/40 ® 10/45mA  
ICC2 = 90 ® 70mA  
3.0  
Revise  
January 14, 1998  
Final  
- Change datasheet format  
- Erase 70ns part from KM616V4000BI, KM616U4000B and  
KM616U4000BI Family  
- Power dissipation improved 0.7 to 1.0W  
- VIL(MAX) improved 0.4 to 0.6V.  
- ICC2 decreased 70 to 60mA.  
- Erase 100ns from KM616V4000B commercial product  
Error correction  
3.01  
August 7, 1998  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 3.01  
1
January 1998  

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