Datasheet > K6T4016U3B-TB100

K6T4016U3B-TB100

更新时间： 2024-11-07 08:46:59

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	149K
描述
Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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K6T4016U3B-TB100 数据手册

K6T4016V3B, K6T4016U3B Family

CMOS SRAM

Document Title

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No.

History

Draft Data

Remark

0.0

Initial draft

June 28, 1996

Advance

0.1

Revise

September 19, 1996

Preliminary

- Die name change: A to B

1.0

2.0

Finalize

December 17, 1996

February 17, 1997

Final

Revise

- Operating current update and release.

ICC(Read/Write) = 20/40 ® 10/45mA

ICC1(Read/Write) = 20/40 ® 10/45mA

ICC2 = 90 ® 70mA

3.0

Revise

January 14, 1998

Final

- Change datasheet format

- Erase 70ns part from KM616V4000BI, KM616U4000B and

KM616U4000BI Family

- Power dissipation improved 0.7 to 1.0W

- VIL(MAX) improved 0.4 to 0.6V.

- ICC2 decreased 70 to 60mA.

- Erase 100ns from KM616V4000B commercial product

Error correction

3.01

3.02

August 7, 1998

Final

Revise

October 15, 2001

- Improved VOH(output high voltage) from 2.2V to 2.4V.

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 3.02

October 2001

12 3 4 5 6 7...9

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