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K6T4016U3C-RB70 PDF预览

K6T4016U3C-RB70

更新时间: 2024-11-05 22:18:23
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 157K
描述
256Kx16 bit Low Power and Low Voltage CMOS Static RAM

K6T4016U3C-RB70 数据手册

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K6T4016V3C, K6T4016U3C Family  
CMOS SRAM  
Document Title  
256Kx16 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
Initial draft  
January 13, 1998  
Advance  
0.1  
Revise  
June 12, 1998  
Preliminary  
- Speed bin change  
Commercial: 70/85ns to 70/85/100ns  
Industrial: 85/100ns to 70/85/100ns  
- DC Characteristics change  
ICC: 5mA at read/write to 4mA at read  
ICC1: 5mA to 6mA  
ICC2: 50mA to 45mA  
ISB: 0.5mA to 0.3mA  
ISB1: 10mA to 15mA for commercial parts  
0.11  
1.0  
Errata correction  
Finalize  
August 13, 1998  
November 16, 1998  
June 26, 2001  
Final  
Final  
2.0  
Revise  
- Add K6T4016V3C-TB55 product  
2.01  
Revise  
October 15, 2001  
Final  
- Improved VOH(output high voltage) from 2.2V to 2.4V.  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 2.01  
October 2001  

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