5秒后页面跳转
K6T4016U3C-RF85T PDF预览

K6T4016U3C-RF85T

更新时间: 2024-11-09 13:09:03
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 157K
描述
Standard SRAM, 256KX16, 85ns, CMOS, PDSO44

K6T4016U3C-RF85T 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:TSOP, TSOP44,.46,32Reach Compliance Code:compliant
风险等级:5.88Is Samacsys:N
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3 V
认证状态:Not Qualified反向引出线:YES
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.045 mA标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

K6T4016U3C-RF85T 数据手册

 浏览型号K6T4016U3C-RF85T的Datasheet PDF文件第2页浏览型号K6T4016U3C-RF85T的Datasheet PDF文件第3页浏览型号K6T4016U3C-RF85T的Datasheet PDF文件第4页浏览型号K6T4016U3C-RF85T的Datasheet PDF文件第5页浏览型号K6T4016U3C-RF85T的Datasheet PDF文件第6页浏览型号K6T4016U3C-RF85T的Datasheet PDF文件第7页 
K6T4016V3C, K6T4016U3C Family  
CMOS SRAM  
Document Title  
256Kx16 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
Initial draft  
January 13, 1998  
Advance  
0.1  
Revise  
June 12, 1998  
Preliminary  
- Speed bin change  
Commercial: 70/85ns to 70/85/100ns  
Industrial: 85/100ns to 70/85/100ns  
- DC Characteristics change  
ICC: 5mA at read/write to 4mA at read  
ICC1: 5mA to 6mA  
ICC2: 50mA to 45mA  
ISB: 0.5mA to 0.3mA  
ISB1: 10mA to 15mA for commercial parts  
0.11  
1.0  
Errata correction  
Finalize  
August 13, 1998  
November 16, 1998  
June 26, 2001  
Final  
Final  
2.0  
Revise  
- Add K6T4016V3C-TB55 product  
2.01  
Revise  
October 15, 2001  
Final  
- Improved VOH(output high voltage) from 2.2V to 2.4V.  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 2.01  
October 2001  

与K6T4016U3C-RF85T相关器件

型号 品牌 获取价格 描述 数据表
K6T4016U3C-TB10 SAMSUNG

获取价格

256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TB100 SAMSUNG

获取价格

Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T4016U3C-TB10T SAMSUNG

获取价格

Standard SRAM, 256KX16, 100ns, CMOS, PDSO44
K6T4016U3C-TB70 SAMSUNG

获取价格

256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TB700 SAMSUNG

获取价格

Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T4016U3C-TB85 SAMSUNG

获取价格

256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TB850 SAMSUNG

获取价格

Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T4016U3C-TB85T SAMSUNG

获取价格

Standard SRAM, 256KX16, 85ns, CMOS, PDSO44
K6T4016U3C-TF10 SAMSUNG

获取价格

256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TF70 SAMSUNG

获取价格

256Kx16 bit Low Power and Low Voltage CMOS Static RAM