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K6T4016U3C-TB700 PDF预览

K6T4016U3C-TB700

更新时间: 2024-11-09 19:10:35
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 154K
描述
Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

K6T4016U3C-TB700 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.91
最长访问时间:70 nsJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

K6T4016U3C-TB700 数据手册

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K6T4016V3C, K6T4016U3C Family  
CMOS SRAM  
Document Title  
256Kx16 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
Initial draft  
January 13, 1998  
Advance  
0.1  
Revise  
June 12, 1998  
Preliminary  
- Speed bin change  
Commercial: 70/85ns to 70/85/100ns  
Industrial: 85/100ns to 70/85/100ns  
- DC Characteristics change  
ICC: 5mA at read/write to 4mA at read  
ICC1: 5mA to 6mA  
ICC2: 50mA to 45mA  
ISB: 0.5mA to 0.3mA  
ISB1: 10mA to 15mA for commercial parts  
0.11  
1.0  
Errata correction  
Finalize  
August 13, 1998  
November 16, 1998  
June 26, 2001  
Final  
Final  
2.0  
Revise  
- Add K6T4016V3C-TB55 product  
2.01  
Revise  
October 15, 2001  
Final  
- Improved VOH(output high voltage) from 2.2V to 2.4V.  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 2.01  
October 2001  

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