Datasheet > K6T4016U3C-RB85T

K6T4016U3C-RB85T

更新时间： 2024-09-17 08:13:07

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	154K
描述
Standard SRAM, 256KX16, 85ns, CMOS, PDSO44

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K6T4016U3C-RB85T 数据手册

K6T4016V3C, K6T4016U3C Family

CMOS SRAM

Document Title

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No History

Draft Date

Remark

0.0

Initial draft

January 13, 1998

Advance

0.1

Revised

June 12, 1998

Preliminary

- Speed bin change

Commercial : 70/85ns ® 70/85/100ns

Industrial : 85/100ns ® 70/85/100ns

- DC Characteristics change

ICC : 5mA at read/write ® 4mA at read

ICC1 : 5mA ® 6mA

ICC2 : 50mA ® 45mA

ISB : 0.5mA ® 0.3mA

ISB1 : 10mA ® 15mA for commercial parts

Errata correction

0.11

1.0

August 13, 1998

Finalize

November 16, 1998

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

November 1998

12 3 4 5 6 7...9

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与K6T4016U3C-RB85T相关器件

型号	品牌	获取价格	描述	数据表
K6T4016U3C-RF10	SAMSUNG	获取价格	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-RF100	SAMSUNG	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
K6T4016U3C-RF10T	SAMSUNG	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44
K6T4016U3C-RF70	SAMSUNG	获取价格	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-RF70T	SAMSUNG	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44
K6T4016U3C-RF85	SAMSUNG	获取价格	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-RF850	SAMSUNG	获取价格	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
K6T4016U3C-RF85T	SAMSUNG	获取价格	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44
K6T4016U3C-TB10	SAMSUNG	获取价格	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TB100	SAMSUNG	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44