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K6R4004C1D

更新时间: 2024-11-01 22:47:47
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 220K
描述
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

K6R4004C1D 数据手册

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PRELIMINARY  
CMOS SRAM  
K6R4004V1D  
Document Title  
1Mx4 Bit High Speed Static RAM(3.3V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 0.1  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Add Low Ver.  
Aug. 20. 2001  
Sep. 19. 2001  
Nov. 3. 2001  
Preliminary  
Preliminary  
Preliminary  
Change Icc, Isb and Isb1  
Item  
8ns  
Previous  
110mA  
90mA  
Current  
80mA  
65mA  
55mA  
45mA  
100mA  
85mA  
75mA  
65mA  
20mA  
1.2mA  
10ns  
ICC(Commercial)  
12ns  
80mA  
15ns  
8ns  
70mA  
130mA  
115mA  
100mA  
85mA  
10ns  
12ns  
15ns  
ISB  
ICC(Industrial)  
30mA  
0.5mA  
ISB1(L-ver.)  
1. Correct AC parameters : Read & Write Cycle mA  
2. Delete Low Ver.  
3. Delete Data Retention Characteristics  
Rev. 0.3  
Rev. 1.0  
Nov.23. 2001  
Dec.18. 2001  
Preliminary  
Final  
1. Delete 12ns,15ns speed bin.  
2. Change Icc for Industrial mode.  
Item  
Previous  
100mA  
85mA  
Current  
90mA  
75mA  
8ns  
ICC(Industrial)  
10ns  
1. Add the Lead Free Package type.  
Rev. 2.0  
July. 26, 2004  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.0  
July 2004  
- 1 -  

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