Datasheet > K6R4004C1D

K6R4004C1D

更新时间： 2024-01-07 08:06:01

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
9页	220K
描述
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

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K6R4004C1D 数据手册

PRELIMINARY

CMOS SRAM

K6R4004V1D

Document Title

1Mx4 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 0.1

Rev. 1.0

History

Draft Data

Remark

Initial release with Preliminary.

Add Low Ver.

Aug. 20. 2001

Sep. 19. 2001

Nov. 3. 2001

Preliminary

Change Icc, Isb and Isb1

Item

8ns

110mA

90mA

Current

80mA

65mA

55mA

45mA

100mA

85mA

75mA

65mA

20mA

1.2mA

10ns

ICC(Commercial)

12ns

80mA

15ns

8ns

70mA

130mA

115mA

100mA

85mA

10ns

12ns

15ns

ISB

ICC(Industrial)

30mA

0.5mA

ISB1(L-ver.)

1. Correct AC parameters : Read & Write Cycle mA

2. Delete Low Ver.

3. Delete Data Retention Characteristics

Rev. 0.3

Rev. 1.0

Nov.23. 2001

Dec.18. 2001

Preliminary

Final

1. Delete 12ns,15ns speed bin.

2. Change Icc for Industrial mode.

Item

100mA

85mA

Current

90mA

75mA

8ns

ICC(Industrial)

10ns

1. Add the Lead Free Package type.

Rev. 2.0

July. 26, 2004

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.0

July 2004

- 1 -

12 3 4 5 6 7...9

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