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K6R4004C1D-JI100 PDF预览

K6R4004C1D-JI100

更新时间: 2024-11-25 17:36:23
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 218K
描述
Standard SRAM, 1MX4, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

K6R4004C1D-JI100 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ,
针数:32Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.91最长访问时间:10 ns
JESD-30 代码:R-PDSO-J32长度:20.95 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:4功能数量:1
端子数量:32字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX4封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:3.76 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:10.16 mm
Base Number Matches:1

K6R4004C1D-JI100 数据手册

 浏览型号K6R4004C1D-JI100的Datasheet PDF文件第2页浏览型号K6R4004C1D-JI100的Datasheet PDF文件第3页浏览型号K6R4004C1D-JI100的Datasheet PDF文件第4页浏览型号K6R4004C1D-JI100的Datasheet PDF文件第5页浏览型号K6R4004C1D-JI100的Datasheet PDF文件第6页浏览型号K6R4004C1D-JI100的Datasheet PDF文件第7页 
PRELIMINARY  
CMOS SRAM  
K6R4004C1D  
Document Title  
1Mx4 Bit High Speed Static RAM(5.0V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 0.1  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Change Icc. Isb and Isb1  
September. 7. 2001  
November, 3. 2001  
Preliminary  
Preliminary  
Item  
Previous  
90mA  
80mA  
70mA  
115mA  
100mA  
85mA  
30mA  
Current  
65mA  
55mA  
45mA  
85mA  
75mA  
65mA  
20mA  
5mA  
10ns  
ICC(Commercial)  
12ns  
15ns  
10ns  
12ns  
15ns  
ICC(Industrial)  
ISB  
ISB1  
10mA  
1. Correct AC parameters : Read & Write Cycle mA  
2. Delete Low Ver.  
Rev. 0.2  
Rev. 0.3  
November, 3. 2001  
December, 18. 2001  
Preliminary  
Preliminary  
3. Delete Data Retention Characteristics  
1. Delete 15ns speed bin.  
2. Change Icc for Industrial mode.  
Item  
Previous  
85mA  
75mA  
Current  
75mA  
65mA  
10ns  
12ns  
ICC(Industrial)  
1. Final datasheet release.  
2. Delete 12ns speed bin.  
Rev. 1.0  
Rev. 2.0  
July, 09, 2002  
July. 26, 2004  
Final  
Final  
3. Delete UB,LB releated AC characteristics and timing diagram.  
4. Correct Read Cycle time waveform(2).  
1. Add the Lead Free Package type.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev. 2.0  
July 2004  
- 1 -  

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