Datasheet > K6R4004V1B-I10

K6R4004V1B-I10

更新时间： 2024-11-03 05:04:59

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
9页	183K
描述
SRAM

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中文翻译

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技术参数
数据手册

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K6R4004V1B-I10 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

K6R4004V1B-I10 数据手册

PRELIMINARY

CMOS SRAM

K6R4004V1B-C/B-L, K6R4004V1B-I/B-P

Document Title

1Mx4 Bit (with OE) High Speed Static RAM(3.3V Operating),

Operated at Commercial and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 1.0

History

Draft Data

Remark

Initial release with Design Target.

Jan. 1st, 1997

Jun. 1st, 1997

Design Target

Preliminary

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Rev. 2.0

Release to Final Data Sheet.

2.1. Delete Preliminary.

Feb.11th.1998

Final

2.2. Add 30pF capacitive in test load.

2.3. Relax DC characteristics.

Item

Current

185mA

180mA

175mA

50mA

ICC

10ns

12ns

15ns

f=max.

f=0

VDR=3.0V

160mA

150mA

140mA

40mA

10 / 1mA

0.9mA

ISB

ISB1

IDR

10 / 1.5mA

0.7mA

Rev. 2.1

Change operating current at Industrial Temperature range.

Jun. 27th 1998

Final

Previous spec.

(10/12/15ns part)

185/180/175mA

Changed spec.

(10/12/15ns part)

210/205/200mA

Items

ICC

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.1

June 1998

- 1 -

12 3 4 5 6 7...9

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