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K6R4004V1C-JC12 PDF预览

K6R4004V1C-JC12

更新时间: 2024-01-13 12:22:01
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 117K
描述
Standard SRAM, 1MX4, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

K6R4004V1C-JC12 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ32,.44
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.59最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J32
JESD-609代码:e0长度:20.96 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:4功能数量:1
端子数量:32字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:3.76 mm
最大待机电流:0.01 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.14 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

K6R4004V1C-JC12 数据手册

 浏览型号K6R4004V1C-JC12的Datasheet PDF文件第2页浏览型号K6R4004V1C-JC12的Datasheet PDF文件第3页浏览型号K6R4004V1C-JC12的Datasheet PDF文件第4页浏览型号K6R4004V1C-JC12的Datasheet PDF文件第5页浏览型号K6R4004V1C-JC12的Datasheet PDF文件第6页浏览型号K6R4004V1C-JC12的Datasheet PDF文件第7页 
PRELIMINARY  
CMOS SRAM  
K6R4004V1C-C/C-L, K6R4004V1C-I/C-P  
Document Title  
1Mx4 Bit High Speed Static RAM(3.3V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Feb. 12. 1999  
Mar. 29. 1999  
Preliminary  
Preliminary  
1.1 Removed Low power Version.  
1.2 Removed Data Retention Characteristics.  
1.3 Changed ISB1 to 20mA  
Rev. 2.0  
Rev. 3.0  
Relax D.C parameters.  
Aug. 19. 1999  
Mar. 27. 2000  
Preliminary  
Item  
Previous  
150mA  
145mA  
140mA  
Current  
190mA  
185mA  
180mA  
12ns  
15ns  
20ns  
ICC  
3.1 Delete Preliminary  
Final  
3.2 Update D.C parameters and 10ns part.  
Previous  
Current  
ICC  
-
190mA  
185mA  
180mA  
Isb  
Isb1  
ICC  
Isb  
Isb1  
10ns  
12ns  
15ns  
20ns  
150mA  
140mA  
130mA  
120mA  
70mA  
20mA  
60mA  
10mA  
Rev. 4.0  
Rev. 5.0  
Apr. 24. 2000  
Sep. 24. 2001  
Final  
Final  
Add Low Power-Ver.  
Delete 20ns speed bin  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 5.0  
September 2001  
- 1 -  

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