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K6R4004V1B-JL10T PDF预览

K6R4004V1B-JL10T

更新时间: 2023-02-26 13:40:43
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 183K
描述
Standard SRAM, 1MX4, 10ns, CMOS, PDSO32

K6R4004V1B-JL10T 数据手册

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PRELIMINARY  
CMOS SRAM  
K6R4004V1B-C/B-L, K6R4004V1B-I/B-P  
Document Title  
1Mx4 Bit (with OE) High Speed Static RAM(3.3V Operating),  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Design Target.  
Jan. 1st, 1997  
Jun. 1st, 1997  
Design Target  
Preliminary  
Release to Preliminary Data Sheet.  
1.1. Replace Design Target to Preliminary.  
Rev. 2.0  
Release to Final Data Sheet.  
2.1. Delete Preliminary.  
Feb.11th.1998  
Final  
2.2. Add 30pF capacitive in test load.  
2.3. Relax DC characteristics.  
Item  
Previous  
Current  
185mA  
180mA  
175mA  
50mA  
ICC  
10ns  
12ns  
15ns  
f=max.  
f=0  
VDR=3.0V  
160mA  
150mA  
140mA  
40mA  
10 / 1mA  
0.9mA  
ISB  
ISB1  
IDR  
10 / 1.5mA  
0.7mA  
Rev. 2.1  
Change operating current at Industrial Temperature range.  
Jun. 27th 1998  
Final  
Previous spec.  
(10/12/15ns part)  
185/180/175mA  
Changed spec.  
(10/12/15ns part)  
210/205/200mA  
Items  
ICC  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.1  
June 1998  
- 1 -  

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