Datasheet > K6R4004C1D-KC10

K6R4004C1D-KC10

更新时间： 2024-11-26 22:29:39

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
12页	142K
描述
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

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K6R4004C1D-KC10 数据手册

PRELIMPreliminaryPPPPPPPPPINARY

CMOS SRAM

K6R4016C1D

Document Title

256Kx16 Bit High Speed Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

History

Draft Data

Remark

Initial release with Preliminary.

Package dimension modify on page 11.

Change Icc, Isb and Isb1

September. 7. 2001

Septermber.28. 2001

November, 3, 2001

Preliminary

Item

10ns

90mA

Current

65mA

55mA

45mA

85mA

75mA

65mA

20mA

5mA

ICC(Commercial)

12ns

15ns

10ns

12ns

15ns

80mA

70mA

115mA

100mA

85mA

ICC(Industrial)

ISB

ISB1(Normal)

30mA

10mA

Rev. 0.3

Rev. 0.4

1. Correct AC parameters : Read & Write Cycle

2. Corrrect Power part : Delete "P-Industrial,Low Power" part

3. Delete Data Retention Characteristics

November, 23, 2001

December, 18, 2001

Preliminary

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

Item

85mA

75mA

Current

75mA

10ns

12ns

ICC(Industrial)

65mA

Rev. 1.0

Rev. 2.0

1. Final datasheet release.

2. Delete 12ns speed bin.

July, 09, 2002

June. 20, 2003

Final

1. Add the Lead Free Package type.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.0

June 2003

- 1 -

12 3 4 5 6 7...12

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