Datasheet > K6R4004C1D-KC100

K6R4004C1D-KC100

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	218K
描述
Standard SRAM, 1MX4, 10ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, PLASTIC, SOJ-32

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K6R4004C1D-KC100 数据手册

PRELIMINARY

CMOS SRAM

K6R4004C1D

Document Title

1Mx4 Bit High Speed Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 0.1

History

Draft Data

Remark

Initial release with Preliminary.

Change Icc. Isb and Isb1

September. 7. 2001

November, 3. 2001

Preliminary

Item

90mA

80mA

70mA

115mA

100mA

85mA

30mA

Current

65mA

55mA

45mA

85mA

75mA

65mA

20mA

5mA

10ns

ICC(Commercial)

12ns

15ns

10ns

12ns

15ns

ICC(Industrial)

ISB

ISB1

10mA

1. Correct AC parameters : Read & Write Cycle mA

2. Delete Low Ver.

Rev. 0.2

Rev. 0.3

November, 3. 2001

December, 18. 2001

Preliminary

3. Delete Data Retention Characteristics

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

Item

85mA

75mA

Current

75mA

65mA

10ns

12ns

ICC(Industrial)

1. Final datasheet release.

2. Delete 12ns speed bin.

Rev. 1.0

Rev. 2.0

July, 09, 2002

July. 26, 2004

Final

3. Delete UB,LB releated AC characteristics and timing diagram.

4. Correct Read Cycle time waveform(2).

1. Add the Lead Free Package type.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev. 2.0

July 2004

- 1 -

12 3 4 5 6 7...9

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