生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 119 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 12 ns | JESD-30 代码: | R-PBGA-B119 |
长度: | 22 mm | 内存密度: | 3145728 bit |
内存集成电路类型: | SRAM MODULE | 内存宽度: | 24 |
功能数量: | 1 | 端子数量: | 119 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128KX24 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6R3024V1D-HI09 | SAMSUNG |
获取价格 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) | |
K6R3024V1D-HI090 | SAMSUNG |
获取价格 |
SRAM Module, 128KX24, 9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K6R3024V1D-HI10 | SAMSUNG |
获取价格 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) | |
K6R3024V1D-HI12 | SAMSUNG |
获取价格 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) | |
K6R3024V1D-HI120 | SAMSUNG |
获取价格 |
SRAM Module, 128KX24, 12ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K6R4004C1C-C | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). | |
K6R4004C1C-C10 | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). | |
K6R4004C1C-C12 | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). | |
K6R4004C1C-C15 | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). | |
K6R4004C1C-C20 | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). |