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K6R3024V1D-HC120 PDF预览

K6R3024V1D-HC120

更新时间: 2024-11-02 15:36:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
9页 172K
描述
SRAM Module, 128KX24, 12ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

K6R3024V1D-HC120 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:BGA,针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:12 nsJESD-30 代码:R-PBGA-B119
长度:22 mm内存密度:3145728 bit
内存集成电路类型:SRAM MODULE内存宽度:24
功能数量:1端子数量:119
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX24
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL认证状态:Not Qualified
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM宽度:14 mm
Base Number Matches:1

K6R3024V1D-HC120 数据手册

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for AT&T  
CMOS SRAM  
K6R3024V1D  
Document Title  
128Kx24 Bit High-Speed CMOS Static RAM(3.3V Operating)  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
History  
Remark  
Draft Data  
Rev. 0.0  
Rev. 0.1  
Design-In Specification  
Pin Configurations Modified ( page 2 )  
Add Timing Diagram page 6 ~ 8 )  
Design-In  
Preliminary  
Dec. 05. 2000  
Mar. 07. 2001  
Rev. 0.2  
Rev. 0.3  
Modified Read Cycle Timing(2)  
1) Version change from M to D  
Preliminary  
Preliminary  
April. 04.2001  
June. 23.2001  
2) Cin from 20 to 15 pF  
3) Icc from 300 to 170mA for 9ns products  
from 270 to 150mA for 10ns products  
from 240 to 130mA for 12ns products  
4) Isb ( TTL ) from 120 to 40 mA for all products  
( CMOS ) from 30 to 15 mA for all products  
5) Part number change from -9 to -09 for 9ns products  
Change write parameter( tDW) from 6ns to 5ns at -10  
Final Specification Release  
Rev. 0.4  
Rev. 1.0  
Preliminary  
Final  
Oct. 31. 2001  
Dec. 19. 2001  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,  
please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 1.0  
December 2001  
- 1 -  

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