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K6R4004C1C-C10 PDF预览

K6R4004C1C-C10

更新时间: 2024-11-24 21:55:27
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三星 - SAMSUNG /
页数 文件大小 规格书
8页 158K
描述
1Mx4 Bit High Speed Static RAM(5V Operating).

K6R4004C1C-C10 数据手册

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PRELIMINARY  
CMOS SRAM  
K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E  
Document Title  
1Mx4 Bit High Speed Static RAM(5V Operating).  
Operated at Extended and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Remark  
Draft Data  
Initial release with Preliminary.  
Preliminary  
Preliminary  
Feb. 12. 1999  
Mar. 29. 1999  
1.1 Removed Low power Version.  
1.2 Removed Data Retention Characteristics  
1.3 Changed ISB1 to 20mA  
Rev. 2.0  
2.1 Relax D.C parameters.  
Preliminary  
Aug. 19. 1999  
Item  
Previous  
Current  
190mA  
185mA  
180mA  
12ns  
15ns  
20ns  
160mA  
155mA  
150mA  
ICC  
2.2 Relax Absolute Maximum Rating.  
Item  
Previous  
Current  
Voltage on Any Pin Relative to Vss  
-0.5 to 7.0  
-0.5 to Vcc+0.5  
Rev. 3.0  
3.1 Delete Preliminary  
Final  
Mar. 27. 2000  
3.2 Update D.C parameters and 10ns part.  
Previous  
Current  
ICC  
-
190mA  
185mA  
180mA  
Isb  
Isb1  
ICC  
Isb  
Isb1  
10ns  
12ns  
15ns  
20ns  
160mA  
150mA  
140mA  
130mA  
70mA  
20mA  
60mA  
10mA  
3.3 Added Extended temperature range  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 3.0  
March 2000  
- 1 -  

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