Datasheet > K6R4004C1C-E12

K6R4004C1C-E12

更新时间： 2024-11-24 22:47:47

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
8页	158K
描述
1Mx4 Bit High Speed Static RAM(5V Operating).

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数据手册

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K6R4004C1C-E12 数据手册

PRELIMINARY

CMOS SRAM

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E

Document Title

1Mx4 Bit High Speed Static RAM(5V Operating).

Operated at Extended and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 1.0

History

Remark

Draft Data

Initial release with Preliminary.

Preliminary

Feb. 12. 1999

Mar. 29. 1999

1.1 Removed Low power Version.

1.2 Removed Data Retention Characteristics

1.3 Changed ISB1 to 20mA

Rev. 2.0

2.1 Relax D.C parameters.

Preliminary

Aug. 19. 1999

Item

Current

190mA

185mA

180mA

12ns

15ns

20ns

160mA

155mA

150mA

ICC

2.2 Relax Absolute Maximum Rating.

Item

Current

Voltage on Any Pin Relative to Vss

-0.5 to 7.0

-0.5 to Vcc+0.5

Rev. 3.0

3.1 Delete Preliminary

Final

Mar. 27. 2000

3.2 Update D.C parameters and 10ns part.

Current

ICC

190mA

185mA

180mA

Isb

Isb1

ICC

Isb

Isb1

10ns

12ns

15ns

20ns

160mA

150mA

140mA

130mA

70mA

20mA

60mA

10mA

3.3 Added Extended temperature range

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 3.0

March 2000

- 1 -

12 3 4 5 6 7 8

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