Datasheet > 存储 > SRAM> K6R4004C1C-C12

K6R4004C1C-C12

更新时间： 2024-11-24 21:55:27

品牌	Logo	应用领域
三星 - SAMSUNG		存储静态存储器
页数	文件大小	规格书
8页	158K
描述
1Mx4 Bit High Speed Static RAM(5V Operating).

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中文翻译

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技术参数
数据手册

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K6R4004C1C-C12 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

K6R4004C1C-C12 数据手册

PRELIMINARY

CMOS SRAM

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E

Document Title

1Mx4 Bit High Speed Static RAM(5V Operating).

Operated at Extended and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 1.0

History

Remark

Draft Data

Initial release with Preliminary.

Preliminary

Feb. 12. 1999

Mar. 29. 1999

1.1 Removed Low power Version.

1.2 Removed Data Retention Characteristics

1.3 Changed ISB1 to 20mA

Rev. 2.0

2.1 Relax D.C parameters.

Preliminary

Aug. 19. 1999

Item

Current

190mA

185mA

180mA

12ns

15ns

20ns

160mA

155mA

150mA

ICC

2.2 Relax Absolute Maximum Rating.

Item

Current

Voltage on Any Pin Relative to Vss

-0.5 to 7.0

-0.5 to Vcc+0.5

Rev. 3.0

3.1 Delete Preliminary

Final

Mar. 27. 2000

3.2 Update D.C parameters and 10ns part.

Current

ICC

190mA

185mA

180mA

Isb

Isb1

ICC

Isb

Isb1

10ns

12ns

15ns

20ns

160mA

150mA

140mA

130mA

70mA

20mA

60mA

10mA

3.3 Added Extended temperature range

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 3.0

March 2000

- 1 -

12 3 4 5 6 7 8

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