Datasheet > K6R3024V1D-HI090

K6R3024V1D-HI090

更新时间： 2024-11-03 06:50:31

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
9页	172K
描述
SRAM Module, 128KX24, 9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

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K6R3024V1D-HI090 数据手册

for AT&T

CMOS SRAM

K6R3024V1D

Document Title

128Kx24 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

History

Remark

Draft Data

Rev. 0.0

Rev. 0.1

Design-In Specification

Pin Configurations Modified ( page 2 )

Add Timing Diagram page 6 ~ 8 )

Design-In

Preliminary

Dec. 05. 2000

Mar. 07. 2001

Rev. 0.2

Rev. 0.3

Modified Read Cycle Timing(2)

1) Version change from M to D

Preliminary

April. 04.2001

June. 23.2001

2) Cin from 20 to 15 pF

3) Icc from 300 to 170mA for 9ns products

from 270 to 150mA for 10ns products

from 240 to 130mA for 12ns products

4) Isb ( TTL ) from 120 to 40 mA for all products

( CMOS ) from 30 to 15 mA for all products

5) Part number change from -9 to -09 for 9ns products

Change write parameter( tDW) from 6ns to 5ns at -10

Final Specification Release

Rev. 0.4

Rev. 1.0

Preliminary

Final

Oct. 31. 2001

Dec. 19. 2001

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 1.0

December 2001

- 1 -

12 3 4 5 6 7...9

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与K6R3024V1D-HI090相关器件

型号	品牌	获取价格	描述	数据表
K6R3024V1D-HI10	SAMSUNG	获取价格	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HI12	SAMSUNG	获取价格	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HI120	SAMSUNG	获取价格	SRAM Module, 128KX24, 12ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
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