Datasheet > K6R1016V1D-UI100

K6R1016V1D-UI100

更新时间： 2023-02-26 13:32:56

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
11页	302K
描述
Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44

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K6R1016V1D-UI100 数据手册

for AT&T

CMOS SRAM

K6R1016V1D

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

History

Draft Data

Remark

Rev. 0.0

Rev. 0.1

Rev. 0.2

Initial document.

Speed bin modify

Current modify

May. 11. 2001

June. 18. 2001

September. 9. 2001

Preliminary

Rev. 1.0

1. Delete 12ns speed bin.

2. Change Icc for Industrial mode.

Item

December. 18. 2001

Final

100mA

85mA

Current

90mA

75mA

8ns

ICC(Industrial)

10ns

Rev. 2.0

Rev. 3.0

Rev. 4.0

1. Add tBA,tBLZ,tBHZ,tBW AC parematers.

1. Correct read cycle timing diagram(2).

1. Add the Lead Free Package type.

February. 14. 2002

June. 19. 2002

July. 26, 2004

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev. 4.0

July 2004

- 1 -

12 3 4 5 6 7...11

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