Datasheet > K6R3024V1D

K6R3024V1D

更新时间： 2024-01-02 14:07:49

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
9页	175K
描述
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)

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K6R3024V1D 数据手册

for AT&T

CMOS SRAM

K6R3024V1D

Document Title

128Kx24 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

History

Remark

Draft Data

Rev. 0.0

Rev. 0.1

Design-In Specification

Pin Configurations Modified ( page 2 )

Add Timing Diagram page 6 ~ 8 )

Design-In

Preliminary

Dec. 05. 2000

Mar. 07. 2001

Rev. 0.2

Rev. 0.3

Modified Read Cycle Timing(2)

1) Version change from M to D

Preliminary

April. 04.2001

June. 23.2001

2) Cin from 20 to 15 pF

3) Icc from 300 to 170mA for 9ns products

from 270 to 150mA for 10ns products

from 240 to 130mA for 12ns products

4) Isb ( TTL ) from 120 to 40 mA for all products

( CMOS ) from 30 to 15 mA for all products

5) Part number change from -9 to -09 for 9ns products

Change write parameter( tDW) from 6ns to 5ns at -10

Final Specification Release

Rev. 0.4

Rev. 1.0

Preliminary

Final

Oct. 31. 2001

Dec. 19. 2001

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 1.0

December 2001

- 1 -

12 3 4 5 6 7...9

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与K6R3024V1D相关器件

型号	品牌	获取价格	描述	数据表
K6R3024V1D-HC09	SAMSUNG	获取价格	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HC090	SAMSUNG	获取价格	SRAM Module, 128KX24, 9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K6R3024V1D-HC10	SAMSUNG	获取价格	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HC100	SAMSUNG	获取价格	SRAM Module, 128KX24, 10ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K6R3024V1D-HC12	SAMSUNG	获取价格	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HC120	SAMSUNG	获取价格	SRAM Module, 128KX24, 12ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K6R3024V1D-HI09	SAMSUNG	获取价格	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HI090	SAMSUNG	获取价格	SRAM Module, 128KX24, 9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K6R3024V1D-HI10	SAMSUNG	获取价格	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HI12	SAMSUNG	获取价格	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)