是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | BGA, BGA119,7X17,50 |
针数: | 119 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 最长访问时间: | 12 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B119 |
长度: | 22 mm | 内存密度: | 3145728 bit |
内存集成电路类型: | SRAM MODULE | 内存宽度: | 24 |
功能数量: | 1 | 端子数量: | 119 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128KX24 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA119,7X17,50 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 240 |
电源: | 3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.015 A | 最小待机电流: | 3 V |
子类别: | SRAMs | 最大压摆率: | 0.13 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6R3024V1D-HC120 | SAMSUNG |
获取价格 |
SRAM Module, 128KX24, 12ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 |
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K6R3024V1D-HI09 | SAMSUNG |
获取价格 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
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K6R3024V1D-HI090 | SAMSUNG |
获取价格 |
SRAM Module, 128KX24, 9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 |
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K6R3024V1D-HI10 | SAMSUNG |
获取价格 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
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K6R3024V1D-HI12 | SAMSUNG |
获取价格 |
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
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K6R3024V1D-HI120 | SAMSUNG |
获取价格 |
SRAM Module, 128KX24, 12ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 |
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K6R4004C1C-C | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). |
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K6R4004C1C-C10 | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). |
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K6R4004C1C-C12 | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). |
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K6R4004C1C-C15 | SAMSUNG |
获取价格 |
1Mx4 Bit High Speed Static RAM(5V Operating). |
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