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K6F2016R4D-FF850 PDF预览

K6F2016R4D-FF850

更新时间: 2024-11-11 21:04:15
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
9页 160K
描述
Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48

K6F2016R4D-FF850 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:85 ns其他特性:IT CAN ALSO OPERATE AT 2V
JESD-30 代码:R-PBGA-B48长度:7 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM宽度:6 mm
Base Number Matches:1

K6F2016R4D-FF850 数据手册

 浏览型号K6F2016R4D-FF850的Datasheet PDF文件第2页浏览型号K6F2016R4D-FF850的Datasheet PDF文件第3页浏览型号K6F2016R4D-FF850的Datasheet PDF文件第4页浏览型号K6F2016R4D-FF850的Datasheet PDF文件第5页浏览型号K6F2016R4D-FF850的Datasheet PDF文件第6页浏览型号K6F2016R4D-FF850的Datasheet PDF文件第7页 
K6F2016R4D Family  
CMOS SRAM  
Document Title  
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
Initial Draft  
January 6, 2000  
Preliminary  
Finalized  
April 21, 2000  
Final  
- Errata correction  
- Change for tWHZ : 25 to 20ns for 70ns product  
- Change for tDW : 25 to 30ns for 70ns product  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
April 2000  
- 1 -  

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