生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 48 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.83 |
最长访问时间: | 85 ns | 其他特性: | IT CAN ALSO OPERATE AT 2V |
JESD-30 代码: | R-PBGA-B48 | 长度: | 7 mm |
内存密度: | 2097152 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 2.2 V | 最小供电电压 (Vsup): | 1.65 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6F2016R4E-EF70 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F2016R4E-EF85 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F2016R4E-EF850 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F2016R4G | SAMSUNG |
获取价格 |
2Mb(128K x 16 bit) Low Power SRAM | |
K6F2016R4G-F | SAMSUNG |
获取价格 |
2Mb(128K x 16 bit) Low Power SRAM | |
K6F2016R4G-FF70 | SAMSUNG |
获取价格 |
2Mb(128K x 16 bit) Low Power SRAM | |
K6F2016R4G-FF700 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F2016R4G-FF85 | SAMSUNG |
获取价格 |
2Mb(128K x 16 bit) Low Power SRAM | |
K6F2016R4G-FF850 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 80ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F2016R4G-XF70 | SAMSUNG |
获取价格 |
2Mb(128K x 16 bit) Low Power SRAM |