生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 48 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.83 |
最长访问时间: | 70 ns | JESD-30 代码: | R-PBGA-B48 |
长度: | 7 mm | 内存密度: | 2097152 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 2.7 V |
最小供电电压 (Vsup): | 2.3 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
宽度: | 6 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6F2016S4D-FF85 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F2016S4D-FF85T | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 85ns, CMOS, PBGA48 | |
K6F2016S4E-EF70 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F2016S4E-EF85 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F2016T6E-TF450 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 45ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
K6F2016U4D | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-F | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-FF55 | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-FF550 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F2016U4D-FF70 | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |